1 publication order number: NGB8245N/d NGB8245N ignition igbt 20 a, 450 v, n ? channel d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil? on? plug and driver? on? coil applications ? d 2 pak package offers smaller footprint for increased board space ? gate? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? low threshold voltage for interfacing power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? this is a pb? free device applications ? ignition systems maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector? emitter voltage v ces 500 v collector ? gate voltage v cer 500 v gate? emitter voltage v ge 15 v collector current? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate current i g 1.0 ma transient gate current (t 2 ms, f 100 hz) i g 20 ma esd (charged ? device model) esd 2.0 kv esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 500 v total power dissipation @ t c = 25 c derate above 25 c p d 150 1.0 w w/ c operating & storage temperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 20 a, 450 v v ce(on) 1.24 v @ i c = 15 a, v ge 4.0 v c e g r g device package shipping ? ordering information littelfuse.com r ge NGB8245Nt4g d 2 pak (pb?free) 800 / tape & reel d 2 pak case 418b style 4 marking diagram ngb 8245ng ayww 1 gate 3 emitter 4 collector 2 collector NGB8245N = device code a = assembly location y = year ww = work week g = pb ? free package 1 specifications subject to change without notice. ? 2016 littelfuse, inc. september 19, 2016 ? rev. 2
NGB8245N unclamped collector ?to ? emitter avalanche characteristics characteristic symbol value unit single pulse collector ? to? emitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 9.5 a, r g = 1 k , l = 3.5 mh, starting t c = 150 c e as 158 mj thermal characteristics thermal resistance, junction ? to? case r jc 1.0 c/w thermal resistance, junction ? to? ambient (note 1) r ja 62.5 c/w maximum temperature for soldering purposes, 1/8 from case for 5 seconds (note 2) t l 275 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. 2. for further details, see soldering and mounting techniques reference manual: solderrm/d. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics (note 3) collector? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 175 c 430 450 470 v i c = 10 ma t j = ? 40 c to 175 c 450 475 500 i c = 12 a, l = 3.5 mh, r g = 1 k (note 4) t j = ? 40 c to 175 c 420 450 480 collector ? emitter leakage current i ces v ce = 15 v, v ge = 0 v t j = 25 c 0.002 1.0 a v ce = 250 v, r g = 1 k t j = ? 40 c to 175 c 0.5 2.0 100 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 30 33 39 v t j = 175 c 31 35 40 t j = ? 40 c 30 31 37 reverse collector? emitter leakage current i ces(r) v ce = ? 24 v t j = 25 c ? 0.4 1.0 ma t j = 175 c ? 20 35 t j = ? 40 c ? 0.04 0.2 gate? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 175 c 12 12.5 14 v gate? emitter leakage current i ges v ge = 5.0 v t j = ? 40 c to 175 c 200 316 350 a gate resistor r g t j = ? 40 c to 175 c 70 gate? emitter resistor r ge t j = ? 40 c to 175 c 14.25 16 25 k on characteristics (note 3) gate threshold voltage v ge(th) i c = 1.0 ma, v ge = v ce t j = 25 c 1.5 1.8 2.1 v t j = 175 c 0.7 1.0 1.3 t j = ? 40 c 1.7 2.0 2.3 threshold temperature coefficient (negative) 4.0 4.6 5.2 mv/ c collector? to? emitter on ?voltage v ce(on) i c = 10 a, v ge = 3.7 v t j = ? 40 c to 175 c 0.8 1.11 1.97 v i c = 10 a, v ge = 4.0 v t j = ? 40 c to 175 c 0.8 1.10 1.85 i c = 15 a, v ge = 4.0 v t j = ? 40 c to 175 c 0.8 1.24 2.00 forward transconductance gfs i c = 6.0 a, v ce = 5.0 v t j = 25 c 10 19 25 mhos dynamic characteristics (note 3) input capacitance c iss f = 10 khz, v ce = 25 v t j = 25 c 1100 1400 1600 pf output capacitance c oss 50 65 80 transfer capacitance c rss 15 20 25 2 publication order number: NGB8245N/d specifications subject to change without notice. ? 2016 littelfuse, inc. september 19, 2016 ? rev. 2
NGB8245N electrical characteristics characteristic unit max typ min temperature test conditions symbol switching characteristics (note 3) turn ? on delay time (resistive) 10% v ge to 10% i c t d(on)r v cc = 14 v, r l = 1.0 , r g = 1.0 k , v ge = 5.0 v t j = ? 40 c to 175 c 0.1 1.0 2.0 s rise time (resistive) 10% i c to 90% i c t rr t j = ? 40 c to 175 c 1.0 3.4 6.0 turn ? off delay time (resistive) 90% v ge to 90% i c t d(off)r v cc = 14 v, r l = 1.0 , r g = 1.0 k , v ge = 5.0 v t j = ? 40 c to 175 c 2.0 4.5 8.0 s fall time (resistive) 90% i c to 10% i c t fr t j = ? 40 c to 175 c 3.0 8.0 12 turn ? off delay time (inductive) 90% v ge to 90% i c t d(off)l v ce = bv ces , l = 0.5mh, r g = 1.0 k , i c = 10 a, v ge = 5.0 v t j = ? 40 c to 175 c 6.5 9.7 12.5 s fall time (inductive) 90% i c to 10% i c t fl t j = ? 40 c to 175 c 6.0 8.3 11 3. electrical characteristics at temperature other than 25 c, dynamic and switching characteristics are not subject to production testing. 4. not subject to production testing. 3 publication order number: NGB8245N/d s pecifications subject to change without notice. ? 2016 littelfuse, inc. s ept ember 19, 2016 ? rev. 2
NGB8245N typical electrical characteristics figure 1. self clamped inductive switching figure 2. open secondary avalanche current vs. temperature figure 3. collector ? to? emitter voltage vs. junction temperature figure 4. collector current vs. collector? to? emitter voltage figure 5. collector current vs. collector? to? emitter voltage figure 6. collector current vs. collector? to? emitter voltage inductor (mh) 250 068 4 100 50 200 0 400 150 10 t j = 25 c scis energy (mj) t j , junction temperature ( c) ?50 50 75 250 100 ?25 125 10 20 5 15 0 25 30 175 v cc = 14 v v ge = 5.0 v r g = 1000 l = 10 mh 150 l = 3.0 mh l = 1.8 mh i a , avalanche current (a) 1.25 t j , junction temperature ( c) v ce , collector to emitter voltage (v) ?50 50 75 250 100 ?25 125 0.5 1.5 0.25 1.0 0.0 1.75 2.0 0.75 150 v ge = 4.5 v i c = 25 a i c = 20 a i c = 15 a i c = 10 a i c = 7.5 a 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 175 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 0 40 6 10 4 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = ? 40 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 40 10 2 i c, collector current (a) 0 60 20 30 50 8 1357 v ce , collector to emitter voltage (v) t j = 25 c v ge = 10 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 06 4 v cc = 14 v v ge = 5.0 v r g = 1000 350 300 2 t j = 175 c 175 4 publication order number: NGB8245N/d s pecifications subject to change without notice. ? 2016 littelfuse, inc. s ept ember 19, 2016 ? rev. 2
NGB8245N typical electrical characteristics t j , junction temperature ( c) gate threshold voltage (v) ?50 75 100 250 125 ?25 175 mean + 4 mean ? 4 mean v ge , gate to emitter voltage (v) 1.50 0.25 0 2.50 0.75 1.25 2.00 10000 1000 100 10 0.1 6 4 0 8 10 12 figure 7. transfer characteristics figure 8. collector ? to? emitter leakage current vs. temperature figure 9. gate threshold voltage vs. temperature figure 10. capacitance vs. collector? to? emitter voltage figure 11. resistive switching fall time vs. temperature t j , junction temperature ( c) figure 12. inductive switching fall time vs. temperature t j , junction temperature ( c) collector to emitter leakage current ( a) switching time ( s) 050 25 ?25 125 175 t j = 175 c 75 100 150 50 75 25 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a l = 300 h v ce = 200 v 1.5 3 3.5 2.5 4 2 0.5 20 10 40 0 30 0 v ce = 5 v i c , collector current (a) 1.0 50 150 0.50 1.00 1.75 2.25 2 125 t delay 10000 1000 100 10 0.1 v ce , collector to emitter voltage (v) c, capacitance (pf) 01 5 52 5 10 20 c rss c iss c oss 1.0 6 4 0 8 10 12 t j , junction temperature ( c) switching time ( s) 75 50 100 175 150 t fall v cc = 300 v v ge = 5.0 v r g = 1000 i c = 9.0 a r l = 33 2 25 125 t delay 25 15 45 5 35 1 t j = ? 40 c t j = 25 c ?50 v ce = ? 24 v 5 publication order number: NGB8245N/d s pecifications subject to change without notice. ? 2016 littelfuse, inc. s ept ember 19, 2016 ? rev. 2
NGB8245N 0.000001 0.001 0.0001 0.1 100 1 0.01 0.01 t,time (s) r(t), transient thermal resistance ( c/watt) 11 0 100 1000 0.1 figure 13. minimum pad transient thermal resistance (non? normalized junction ? to? ambient) 10 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,time (s) r jc (t), transient thermal resistance ( c/watt) 1 0.1 figure 14. best case transient thermal resistance (non? normalized junction ? to? case mounted on cold plate) 0.00001 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) for d=1: r jc r(t) for t 0.1 s p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r jc (t) 6 publication order number: NGB8245N/d s pecifications subject to change without notice. ? 2016 littelfuse, inc. s ept ember 19, 2016 ? rev. 2
NGB8245N package dimensions seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b style 4: pin 1. gate 2. collector 3. emitter 4. collector w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f p u view w ?w d 2 pak 3 case 418b ? 04 issue k soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1 littelfuse.com 7 publication order number: NGB8245N/d s pecifications subject to change without notice. ? 2016 littelfuse, inc. s ept ember 19, 2016 ? rev. 2 infor mation furnished is believed to be accurate and reliable. however, users should independently evaluate the suitability of and test each product selected for their own applications.? littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applicatio ns, devices intended for surgical implant into the body, or any other applic ation in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those express ly set forth in applic able littelfuse product documentation.? warranties granted by littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable littelfuse documentation.? littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by littelfuse as se t forth in applicable littelfuse documentation.? the sale and use of littelfuse products is subject to littelfuse terms and conditions of sale, unless otherwise agreed by littelfuse.
|
